Samsung Electronics announced that it had begun mass producing the industry’s first 10-nanometer class, 8-gigabit DDR4 DRAM chips and the modules derived from them.
Samsung opened the door to 10nm-class DRAM for the first time in the industry after overcoming technical challenges in DRAM scaling.
Samsung’s roll-out of the 10nm-class DRAM marks yet another milestone for the company after it first mass produced 20-nanometer 4Gb DDR3 DRAM in 2014.
“Samsung’s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry,” said Young-Hyun Jun, President of Memory Business, Samsung Electronics.
Samsung’s leading-edge 10nm-class 8Gb DDR4 DRAM significantly improves the wafer productivity of 20nm 8Gb DDR4 DRAM by more than 30 percent.
The new DRAM supports a data transfer rate of 3,200 megabits per second, which is more than 30 percent faster than the 2,400Mbps rate of 20nm DDR4 DRAM.
To achieve an extremely high level of DRAM scalability, Samsung has taken its technological innovation one step further than what was previously used for 20nm DRAM.
Through quadruple patterning, which enables the use of existing photolithography equipment, Samsung also built the core technological foundation for the development of the next-generation 10nm-class DRAM.
Based on its advancements with the new 10nm-class DDR4 DRAM, Samsung also expects to introduce a 10nm-class mobile DRAM solution with high density and speed later this year, which will further solidify its leadership in the ultra-HD smartphone market.
While introducing a broad range of 10nm-class DDR4 modules with capacities ranging from 4GB for notebook PCs to 128GB for enterprise servers, Samsung will be extending its 20nm DRAM line-up with its new 10nm-class DRAM portfolio throughout the year.